Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well

We report an anomalous temperature dependence of the photoluminescence (PL) spectrum of a 7 nm Ga0.72In0.28N0.028As0.972/GaAs single quantum well. The PL peak energy exhibits an inverted S-shape dependence with temperature. Below 100 K, the PL integrated intensity shows a temperature dependence simi...

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Bibliographic Details
Published in:Applied physics letters 2000-04, Vol.76 (16), p.2241-2243
Main Authors: Grenouillet, L., Bru-Chevallier, C., Guillot, G., Gilet, P., Duvaut, P., Vannuffel, C., Million, A., Chenevas-Paule, A.
Format: Article
Language:English
Subjects:
Engineering Sciences
Materials
Optics
Photonic
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Summary:We report an anomalous temperature dependence of the photoluminescence (PL) spectrum of a 7 nm Ga0.72In0.28N0.028As0.972/GaAs single quantum well. The PL peak energy exhibits an inverted S-shape dependence with temperature. Below 100 K, the PL integrated intensity shows a temperature dependence similar to that of amorphous semiconductors. The observed anomalous behavior is explained by a strong localization of carriers at low temperatures that could be induced by the presence of nitrogen. Thermal annealing does not significantly change the anomalous temperature dependence.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.126308