Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55 μm emission

We investigated the molecular-beam epitaxy and the properties of GaAsSbN compound with a low N content in quantum well structures on GaAs. This alloy appears to be an interesting alternative for GaAs-based devices emitting in the 1.3–1.55 μm wavelength range. Favorable comparison with the GaInAsN al...

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Bibliographic Details
Published in:Journal of crystal growth 2001-07, Vol.227, p.553-557
Main Authors: Harmand, J.C, Ungaro, G, Ramos, J, Rao, E.V.K, Saint-Girons, G, Teissier, R, Le Roux, G, Largeau, L, Patriarche, G
Format: Article
Language:English
Subjects:
A3. Laser epitaxy
A3. Molecular beam epitaxy
B1. Antimonides
B1. Nitrides
B2. Semiconducting III–V materials
B3. Optical fiber devices
Condensed Matter
Materials Science
Physics
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Summary:We investigated the molecular-beam epitaxy and the properties of GaAsSbN compound with a low N content in quantum well structures on GaAs. This alloy appears to be an interesting alternative for GaAs-based devices emitting in the 1.3–1.55 μm wavelength range. Favorable comparison with the GaInAsN alloy is presented in terms of emission at longer wavelengths. Photoluminescence and annealing studies of GaAsSbN showed characteristics comparable to those already reported for GaInAsN. Carrier recombinations are dominated by extrinsic transitions in as-grown samples. Thermal anneal drastically improves the photoluminescence properties.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)00765-5