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Resistive switching study in HfO 2 based resistive memories by conductive atomic force microscopy in vacuum

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Bibliographic Details
Published in:Journal of applied physics 2018-07, Vol.124 (1)
Main Authors: Singh, A., Blonkowski, S., Kogelschatz, M.
Format: Article
Language:English
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ISSN:0021-8979
1089-7550
DOI:10.1063/1.5025143