Resistive switching study in HfO 2 based resistive memories by conductive atomic force microscopy in vacuum

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Published in:Journal of applied physics 2018-07, Vol.124 (1)
Main Authors: Singh, A., Blonkowski, S., Kogelschatz, M.
Format: Article
Language:English
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Physics
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container_title Journal of applied physics
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creator Singh, A.
Blonkowski, S.
Kogelschatz, M.
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Physics
title Resistive switching study in HfO 2 based resistive memories by conductive atomic force microscopy in vacuum
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