A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Pt/HfO2/Pt Resistive Random Access Memory

Through ab initio calculations, we propose that the conductive filaments in Pt/HfO 2 /Pt resistive random access memories are due to HfO x suboxides, possibly tetragonal, where x ≤ 1.5. The electroforming process is initiated by a continuous supply of oxygen Frenkel defect pairs through an electroch...

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Published in:IEEE transactions on electron devices 2014-05, Vol.61 (5), p.1394-1402
Main Authors: Xue, Kan-Hao, Traoré, Boubacar, Blaise, Philippe, Fonseca, Leonardo, Vianello, Elisa, Molas, Gabriel, de Salvo, Barbara, Ghibaudo, Gérard, Magyari-Kope, Blanka, Nishi, Yoshio
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Microelectronics
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container_issue 5
container_start_page 1394
container_title IEEE transactions on electron devices
container_volume 61
creator Xue, Kan-Hao
Traoré, Boubacar
Blaise, Philippe
Fonseca, Leonardo
Vianello, Elisa
Molas, Gabriel
de Salvo, Barbara
Ghibaudo, Gérard
Magyari-Kope, Blanka
Nishi, Yoshio
description Through ab initio calculations, we propose that the conductive filaments in Pt/HfO 2 /Pt resistive random access memories are due to HfO x suboxides, possibly tetragonal, where x ≤ 1.5. The electroforming process is initiated by a continuous supply of oxygen Frenkel defect pairs through an electrochemical process. The accumulation of oxygen vacancies leads to metallic suboxide phases, which remain conductive even as ultranarrow 1-nm 2 filaments embedded in an insulating HfO 2 matrix. Our experiments further show that the filaments remain as major leakage paths even in the OFF-state. Moreover, thermal heating may increase the OFF-state resistance, implying that there are oxygen interstitials left in the oxide layer, which may recombine with the oxygen vacancies in the filaments at high temperature.
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Microelectronics
title A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Pt/HfO2/Pt Resistive Random Access Memory
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