Effective work function modulation by sacrificial gate aluminum diffusion on HfON-based 14nm NMOS devices

Sacrificial gate first process efficiency to further increase effective work function (WF$_{eff}$) towards P+ by metallic aluminum diffusion is demonstrated in this work by combining capacitance vs voltage (CV) measurements on beveled oxides with different spectroscopic techniques. Aluminum diffusio...

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Bibliographic Details
Published in:Microelectronic engineering 2015-11, Vol.147, p.113-116
Main Authors: Suarez-Segovia, C., Leroux, C., Caubet, P., Domengie, F., Reimbold, G., Romano, G., Gourhant, O., Joseph, V., Ghibaudo, G.
Format: Article
Language:English
Subjects:
Engineering Sciences
Micro and nanotechnologies
Microelectronics
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Summary:Sacrificial gate first process efficiency to further increase effective work function (WF$_{eff}$) towards P+ by metallic aluminum diffusion is demonstrated in this work by combining capacitance vs voltage (CV) measurements on beveled oxides with different spectroscopic techniques. Aluminum diffusion role on WF$_{eff}$ is evidenced and is found to be simultaneously dependent of as-deposited aluminum dose and annealing temperature.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2015.04.062