Graphene nanomesh transistor with high on/off ratio and good saturation behavior

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Bibliographic Details
Published in:Applied physics letters 2013-10, Vol.103 (18)
Main Authors: Berrada, Salim, Hung Nguyen, Viet, Querlioz, Damien, Saint-Martin, Jérôme, Alarcón, Alfonso, Chassat, Christophe, Bournel, Arnaud, Dollfus, Philippe
Format: Article
Language:English
Subjects:
Electronics
Engineering Sciences
Micro and nanotechnologies
Microelectronics
Online Access:Get full text
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ISSN:0003-6951
1077-3118