Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors

We numerically investigate electron quantum transport in 2D van der Waals tunnel field-effect-transistors in the presence of lateral momentum mismatch induced by lattice mismatch or rotational misalignment between the two-dimensional layers. We show that a small momentum mismatch induces a threshold...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2018-02, Vol.51 (5), p.55102
Main Authors: Cao, Jiang, Logoteta, Demetrio, Pala, Marco G, Cresti, Alessandro
Format: Article
Language:English
Subjects:
2D transition metal dichalcogenides
Engineering Sciences
non-equilibrium Green's function
Physics
tunnel field-effect-transistor
van der Waals heterostructures
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Summary:We numerically investigate electron quantum transport in 2D van der Waals tunnel field-effect-transistors in the presence of lateral momentum mismatch induced by lattice mismatch or rotational misalignment between the two-dimensional layers. We show that a small momentum mismatch induces a threshold voltage shift without altering the subthreshold swing. On the contrary, a large momentum mismatch produces significant potential variations and ON-current reduction. Short-range scattering, such as that due to phonons or system edges, enables momentum variations, thus enhancing interlayer tunneling. The coupling of electrons with acoustic phonons is shown to increase the ON current without affecting the subthreshold swing. In the case of optical phonons, the ON-current increase is accompanied by a subthreshold swing degradation due to the inelastic nature of the scattering.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/aaa1b6