Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors

We study the impact of electron–phonon interaction on the subthreshold operation region of Tunnel-FETs by means of full-quantum simulations. Our approach is based on the nonequilibrium Green’s function method, where acoustic and optical phonon scatterings are taken into account through the self-cons...

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Bibliographic Details
Published in:Journal of computational electronics 2016-12, Vol.15 (4), p.1240-1247
Main Authors: Pala, Marco G., Grillet, Corentin, Cao, Jiang, Logoteta, Demetrio, Cresti, Alessandro, Esseni, David
Format: Article
Language:English
Subjects:
Acoustics
Approximation
Born approximation
Devices
Electrical Engineering
Electron phonon interactions
Electronics
Electrons
Energy
Engineering
Engineering Sciences
Field effect transistors
Green's functions
Heterojunctions
Heterostructures
Indium arsenides
Inelastic scattering
Interfaces
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mechanical Engineering
Nanowires
Optical and Electronic Materials
Phonons
Physics
Semiconductor devices
Simulation
Temperature
Theoretical
Tunnels
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Summary:We study the impact of electron–phonon interaction on the subthreshold operation region of Tunnel-FETs by means of full-quantum simulations. Our approach is based on the nonequilibrium Green’s function method, where acoustic and optical phonon scatterings are taken into account through the self-consistent Born approximation. Two device architectures are analyzed: InAs nanowire longitudinal Tunnel-FETs, and 2D vertical Tunnel-FETs based on either an GaSb/AlSb/InAs heterostructure or a MoS 2 /WTe 2 van der Waals heterojunction. In InAs nanowire Tunnel-FETs with interface traps, electron–phonon interaction deteriorates the subthreshold swing by allowing trap-assisted tunneling at energies higher than the valence-band edge in the source. In vertical heterojunction Tunnel-FETs, optical phonon scattering increases the OFF current by inducing inelastic transition in the overlap region even in the absence of traps.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-016-0900-8