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Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors
We study the impact of electron–phonon interaction on the subthreshold operation region of Tunnel-FETs by means of full-quantum simulations. Our approach is based on the nonequilibrium Green’s function method, where acoustic and optical phonon scatterings are taken into account through the self-cons...
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| Published in: | Journal of computational electronics 2016-12, Vol.15 (4), p.1240-1247 |
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| Main Authors: | , , , , , |
| Format: | Article |
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| cites | cdi_FETCH-LOGICAL-c383t-cd6028220757ec25f36abe54d53e9f9e4d4ac5d5f57132651c5e6467ddd2daab3 |
| container_end_page | 1247 |
| container_issue | 4 |
| container_start_page | 1240 |
| container_title | Journal of computational electronics |
| container_volume | 15 |
| creator | Pala, Marco G. Grillet, Corentin Cao, Jiang Logoteta, Demetrio Cresti, Alessandro Esseni, David |
| description | We study the impact of electron–phonon interaction on the subthreshold operation region of Tunnel-FETs by means of full-quantum simulations. Our approach is based on the nonequilibrium Green’s function method, where acoustic and optical phonon scatterings are taken into account through the self-consistent Born approximation. Two device architectures are analyzed: InAs nanowire longitudinal Tunnel-FETs, and 2D vertical Tunnel-FETs based on either an GaSb/AlSb/InAs heterostructure or a MoS
2
/WTe
2
van der Waals heterojunction. In InAs nanowire Tunnel-FETs with interface traps, electron–phonon interaction deteriorates the subthreshold swing by allowing trap-assisted tunneling at energies higher than the valence-band edge in the source. In vertical heterojunction Tunnel-FETs, optical phonon scattering increases the OFF current by inducing inelastic transition in the overlap region even in the absence of traps. |
| doi_str_mv | 10.1007/s10825-016-0900-8 |
| format | article |
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2
/WTe
2
van der Waals heterojunction. In InAs nanowire Tunnel-FETs with interface traps, electron–phonon interaction deteriorates the subthreshold swing by allowing trap-assisted tunneling at energies higher than the valence-band edge in the source. In vertical heterojunction Tunnel-FETs, optical phonon scattering increases the OFF current by inducing inelastic transition in the overlap region even in the absence of traps.</description><identifier>ISSN: 1569-8025</identifier><identifier>EISSN: 1572-8137</identifier><identifier>DOI: 10.1007/s10825-016-0900-8</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Acoustics ; Approximation ; Born approximation ; Devices ; Electrical Engineering ; Electron phonon interactions ; Electronics ; Electrons ; Energy ; Engineering ; Engineering Sciences ; Field effect transistors ; Green's functions ; Heterojunctions ; Heterostructures ; Indium arsenides ; Inelastic scattering ; Interfaces ; Mathematical and Computational Engineering ; Mathematical and Computational Physics ; Mechanical Engineering ; Nanowires ; Optical and Electronic Materials ; Phonons ; Physics ; Semiconductor devices ; Simulation ; Temperature ; Theoretical ; Tunnels</subject><ispartof>Journal of computational electronics, 2016-12, Vol.15 (4), p.1240-1247</ispartof><rights>Springer Science+Business Media New York 2016</rights><rights>Springer Science+Business Media New York 2016.</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-cd6028220757ec25f36abe54d53e9f9e4d4ac5d5f57132651c5e6467ddd2daab3</citedby><cites>FETCH-LOGICAL-c383t-cd6028220757ec25f36abe54d53e9f9e4d4ac5d5f57132651c5e6467ddd2daab3</cites><orcidid>0000-0001-5733-515X ; 0000-0002-1326-2515</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://hal.science/hal-01964711$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Pala, Marco G.</creatorcontrib><creatorcontrib>Grillet, Corentin</creatorcontrib><creatorcontrib>Cao, Jiang</creatorcontrib><creatorcontrib>Logoteta, Demetrio</creatorcontrib><creatorcontrib>Cresti, Alessandro</creatorcontrib><creatorcontrib>Esseni, David</creatorcontrib><title>Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors</title><title>Journal of computational electronics</title><addtitle>J Comput Electron</addtitle><description>We study the impact of electron–phonon interaction on the subthreshold operation region of Tunnel-FETs by means of full-quantum simulations. Our approach is based on the nonequilibrium Green’s function method, where acoustic and optical phonon scatterings are taken into account through the self-consistent Born approximation. Two device architectures are analyzed: InAs nanowire longitudinal Tunnel-FETs, and 2D vertical Tunnel-FETs based on either an GaSb/AlSb/InAs heterostructure or a MoS
2
/WTe
2
van der Waals heterojunction. In InAs nanowire Tunnel-FETs with interface traps, electron–phonon interaction deteriorates the subthreshold swing by allowing trap-assisted tunneling at energies higher than the valence-band edge in the source. 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2
/WTe
2
van der Waals heterojunction. In InAs nanowire Tunnel-FETs with interface traps, electron–phonon interaction deteriorates the subthreshold swing by allowing trap-assisted tunneling at energies higher than the valence-band edge in the source. In vertical heterojunction Tunnel-FETs, optical phonon scattering increases the OFF current by inducing inelastic transition in the overlap region even in the absence of traps.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10825-016-0900-8</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-5733-515X</orcidid><orcidid>https://orcid.org/0000-0002-1326-2515</orcidid></addata></record> |
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| identifier | ISSN: 1569-8025 |
| ispartof | Journal of computational electronics, 2016-12, Vol.15 (4), p.1240-1247 |
| issn | 1569-8025 1572-8137 |
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| source | Springer Nature |
| subjects | Acoustics Approximation Born approximation Devices Electrical Engineering Electron phonon interactions Electronics Electrons Energy Engineering Engineering Sciences Field effect transistors Green's functions Heterojunctions Heterostructures Indium arsenides Inelastic scattering Interfaces Mathematical and Computational Engineering Mathematical and Computational Physics Mechanical Engineering Nanowires Optical and Electronic Materials Phonons Physics Semiconductor devices Simulation Temperature Theoretical Tunnels |
| title | Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors |
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