Evidence for acceptor surface states in GaAs planar-type devices

The nature of surface states existing on a bare surface of weakly n-doped VPE (vapor phase epitaxy) GaAs layers (≈ 10 14 cm −3) has been investigated. Planar-type devices with large interelectrode length (≈ 60

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Bibliographic Details
Published in:Solid-state electronics 1988, Vol.31 (8), p.1327-1333
Main Authors: Dansas, P., Bouchemat, M., Bru, C., Pascal, D., Laval, S.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Engineering Sciences
Exact sciences and technology
Materials
Miscellaneous
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Description
Summary:The nature of surface states existing on a bare surface of weakly n-doped VPE (vapor phase epitaxy) GaAs layers (≈ 10 14 cm −3) has been investigated. Planar-type devices with large interelectrode length (≈ 60
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(88)90433-9