Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects

As CMOS image sensors become more and more attractive and with high performances, it becomes possible to use CCD on CMOS devices with reasonable lengths. However, no study has been done on the radiation hardness of such CCD on CMOS devices. Therefore, we propose in this paper a first study of Charge...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2015-12, Vol.62 (6), p.2965-2970
Main Authors: Marcelot, O., Goiffon, V., Raine, M., Duhamel, O., Gaillardin, M., Molina, R., Magnan, P.
Format: Article
Language:English
Subjects:
Charge
Charge coupled devices
Charge transfer
CMOS image sensors
CMOS image sensors (CIS)
deep submicrometer process
Engineering Sciences
Radiation effects
Signal and Image processing
transfer inefficiency
trapped charge
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Summary:As CMOS image sensors become more and more attractive and with high performances, it becomes possible to use CCD on CMOS devices with reasonable lengths. However, no study has been done on the radiation hardness of such CCD on CMOS devices. Therefore, we propose in this paper a first study of Charge Transfer Inefficiency (CTI) and dark current degradation under TID and DDD irradiations. To do so, test chips have been processed in conventional deep submicron CMOS imaging technologies, and characterized before and after irradiations.
ISSN:0018-9499
0018-9383
1558-1578
DOI:10.1109/TNS.2015.2497405