Impact of low titanium concentration on the structural, electrical and dielectric properties of Pr0.75Bi0.05Sr0.1Ba0.1Mn1−xTixO3 (x = 0, 0.04) compounds

In this work, we report the effect of Ti-doping on the structural, electrical and dielectric properties of Pr 0.75 Bi 0.05 Sr 0.1 Ba 0.1 Mn 1−x Ti x O 3 (x = 0 and 0.04) manganites synthesized by sol–gel route. X-ray structural analysis using Rietveld refinement technique reveals that our samples ar...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2019-01, Vol.30 (1), p.876-891
Main Authors: Sekrafi, H. E., Ben Jazia Kharrat, A., Wederni, M. A., Chniba-Boudjada, N., Khirouni, K., Boujelben, W.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemical Sciences
Chemistry and Materials Science
Cristallography
Dielectric properties
Dielectric relaxation
Electrical resistivity
Equivalent circuits
Frequency ranges
Grain boundaries
Materials Science
Optical and Electronic Materials
Sol-gel processes
Structural analysis
Temperature
Titanium
Transition temperature
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, we report the effect of Ti-doping on the structural, electrical and dielectric properties of Pr 0.75 Bi 0.05 Sr 0.1 Ba 0.1 Mn 1−x Ti x O 3 (x = 0 and 0.04) manganites synthesized by sol–gel route. X-ray structural analysis using Rietveld refinement technique reveals that our samples are single phase and crystallize in the orthorhombic system with Pbnm space group. These structures were characterized by impedance spectroscopy in the frequency range from 40 to 1 MHz and temperatures between 80 and 400 K. DC conductivity analysis shows that our samples disclose a semiconductor behaviour with a semiconductor–metal transition temperature T MS at 380 and 360 K for x = 0 and 0.04 respectively. This result shows that the T MS temperature can be controlled by varying the titanium content. AC conductivity (σ AC ) results show a considerable sensitivity to both temperature and frequency. The impedance plots were well described by an equivalent circuit model taking into account the contributions of semiconductor grains and insulating grain boundaries in the conduction mechanism. Furthermore, a non-Debye type of relaxation in our compounds was confirmed. In addition, we have demonstrated that the dielectric relaxation is hidden by the DC conduction mechanism.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-018-0359-4