A band-modulation device in advanced FDSOI technology: Sharp switching characteristics

A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The de...

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Bibliographic Details
Published in:Solid-state electronics 2016-11, Vol.125, p.103-110
Main Authors: El Dirani, Hassan, Solaro, Yohann, Fonteneau, Pascal, Legrand, Charles-Alex, Marin-Cudraz, David, Golanski, Dominique, Ferrari, Philippe, Cristoloveanu, Sorin
Format: Article
Language:English
Subjects:
Engineering Sciences
Micro and nanotechnologies
Microelectronics
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Summary:A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, low leakage and an adjustable triggering voltage (VON). The Z2-FET operation relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained with the most advanced FDSOI node.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2016.07.018