A band-modulation device in advanced FDSOI technology: Sharp switching characteristics

A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The de...

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Published in:Solid-state electronics 2016-11, Vol.125, p.103-110
Main Authors: El Dirani, Hassan, Solaro, Yohann, Fonteneau, Pascal, Legrand, Charles-Alex, Marin-Cudraz, David, Golanski, Dominique, Ferrari, Philippe, Cristoloveanu, Sorin
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Language:English
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Engineering Sciences
Micro and nanotechnologies
Microelectronics
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cited_by cdi_FETCH-LOGICAL-c397t-9460b2e97f97fc38e55ed554fb6203464c891300ebebd1772114553c9cba0b9a3
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container_end_page 110
container_issue
container_start_page 103
container_title Solid-state electronics
container_volume 125
creator El Dirani, Hassan
Solaro, Yohann
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description A band-modulation device is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, low leakage and an adjustable triggering voltage (VON). The Z2-FET operation relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained with the most advanced FDSOI node.
doi_str_mv 10.1016/j.sse.2016.07.018
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subjects Engineering Sciences
Micro and nanotechnologies
Microelectronics
title A band-modulation device in advanced FDSOI technology: Sharp switching characteristics
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