Evidence of Sub-Band Modulated Transport in Planar Fully Depleted Silicon-on-Insulator MOSFETs

Modulation of the sub-band electron population in the inversion channel of 10-nm planar fully depleted silicon-on-insulator MOSFETs is evidenced by the bias dependence of inversion layer transport parameters. Two distinct inversion-layer electron species were detected by magnetic-field-dependent mag...

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Bibliographic Details
Published in:IEEE electron device letters 2014-11, Vol.35 (11), p.1082-1084
Main Authors: Umana-Membreno, Gilberto A., Sung-Jae Chang, Bawedin, Maryline, Antoszewski, Jarek, Cristoloveanu, Sorin, Faraone, Lorenzo
Format: Article
Language:English
Subjects:
Engineering Sciences
FD-SOI
Hall-effect
Logic gates
magnetoresistance
Micro and nanotechnologies
Microelectronics
mobility
mobility spectrum analysis
MOSFET
Silicon
Silicon-on-insulator
Sociology
Spectral analysis
Statistics
volume inversion
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Summary:Modulation of the sub-band electron population in the inversion channel of 10-nm planar fully depleted silicon-on-insulator MOSFETs is evidenced by the bias dependence of inversion layer transport parameters. Two distinct inversion-layer electron species were detected by magnetic-field-dependent magnetoresistance measurements and high-resolution mobility spectrum analysis. According to self-consistent Poisson-Schrödinger calculations, these species correspond to carriers in distinct sub-bands within the Si channel region. The mobility peak of the carrier with the highest sheet density occurs under gate bias conditions that result in a minimum perpendicular effective electric field.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2358201