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Evidence of Sub-Band Modulated Transport in Planar Fully Depleted Silicon-on-Insulator MOSFETs

Modulation of the sub-band electron population in the inversion channel of 10-nm planar fully depleted silicon-on-insulator MOSFETs is evidenced by the bias dependence of inversion layer transport parameters. Two distinct inversion-layer electron species were detected by magnetic-field-dependent mag...

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Published in:	IEEE electron device letters 2014-11, Vol.35 (11), p.1082-1084
Main Authors:	Umana-Membreno, Gilberto A., Sung-Jae Chang, Bawedin, Maryline, Antoszewski, Jarek, Cristoloveanu, Sorin, Faraone, Lorenzo
Format:	Article
Language:	English
Subjects:	Engineering Sciences FD-SOI Hall-effect Logic gates magnetoresistance Micro and nanotechnologies Microelectronics mobility mobility spectrum analysis MOSFET Silicon Silicon-on-insulator Sociology Spectral analysis Statistics volume inversion
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creator	Umana-Membreno, Gilberto A. Sung-Jae Chang Bawedin, Maryline Antoszewski, Jarek Cristoloveanu, Sorin Faraone, Lorenzo
description	Modulation of the sub-band electron population in the inversion channel of 10-nm planar fully depleted silicon-on-insulator MOSFETs is evidenced by the bias dependence of inversion layer transport parameters. Two distinct inversion-layer electron species were detected by magnetic-field-dependent magnetoresistance measurements and high-resolution mobility spectrum analysis. According to self-consistent Poisson-Schrödinger calculations, these species correspond to carriers in distinct sub-bands within the Si channel region. The mobility peak of the carrier with the highest sheet density occurs under gate bias conditions that result in a minimum perpendicular effective electric field.
doi_str_mv	10.1109/LED.2014.2358201
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source	IEEE Electronic Library (IEL) Journals
subjects	Engineering Sciences FD-SOI Hall-effect Logic gates magnetoresistance Micro and nanotechnologies Microelectronics mobility mobility spectrum analysis MOSFET Silicon Silicon-on-insulator Sociology Spectral analysis Statistics volume inversion
title	Evidence of Sub-Band Modulated Transport in Planar Fully Depleted Silicon-on-Insulator MOSFETs
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