99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

•First isotopically purified silicon epilayers on 300 mm Si(0 0 1) substrates.•28Si isotopic purification >99.992 at.%; harmful 29Si nuclear spin avoided.•Morphological quality of 28Si epilayers compatible with CMOS foundries.•Isotopic purification, CVD epitaxial growth, microelectronics clean ro...

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Bibliographic Details
Published in:Journal of crystal growth 2019-03, Vol.509, p.1-7
Main Authors: Mazzocchi, V., Sennikov, P.G., Bulanov, A.D., Churbanov, M.F., Bertrand, B., Hutin, L., Barnes, J.P., Drozdov, M.N., Hartmann, J.M., Sanquer, M.
Format: Article
Language:English
Subjects:
A1. Isotopes separation and enrichment 28.60.+s
A3. Chemical vapor deposition processes
B2. Semiconducting silicon
B3. Microelectronics 85.40.−e
B3. Quantum devices, silicon spin quantum bits
CMOS
Condensed Matter
Crystals
Electron spin
Epitaxial growth
Epitaxial layers
Foundries
Large scale integration
Materials Science
Physics
Quantum dots
Qubits (quantum computing)
Silicon
Silicon substrates
State of the art
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Summary:•First isotopically purified silicon epilayers on 300 mm Si(0 0 1) substrates.•28Si isotopic purification >99.992 at.%; harmful 29Si nuclear spin avoided.•Morphological quality of 28Si epilayers compatible with CMOS foundries.•Isotopic purification, CVD epitaxial growth, microelectronics clean rooms.•Assessment of 28Si, 29Si, 30Si self-diffusion during thermal anneals. Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration maturity, the lack of nuclear spins in the most abundant 28silicon isotope host crystal for qubits is a major asset for this silicon quantum technology. We have grown 28silicon epitaxial layers (epilayers) with an isotopic purity greater than 99.992% on 300 mm natural abundance silicon crystals. The quality of the mono-crystalline isotopically purified epilayer conforms to the same drastic quality requirements as the natural epilayers used in our pre-industrial CMOS facility. The isotopically purified substrates are now ready for the fabrication of silicon qubits using state-of-the-art 300 mm Si CMOS-foundries equipments and processes.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2018.12.010