Effect of Co layer thickness on magnetic relaxation in Pt/Co/Ir/Co/Pt/GaAs spin valve

•In Pt/Co/Ir/Co/Pt/GaAs heterostructures, magnetic relaxation obeys Fatuzzo-Labrune formalism.•Contributions of reversal phase and domain walls to the magnetic relaxation of the spin valves were distinguished.•Reversal phase and domain walls contributions to the magnetic relaxation depend on Co laye...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2018-08, Vol.459, p.33-36
Main Authors: Morgunov, R.B., L'vova, G.L., Talantsev, A.D., Koplak, O.V., Fache, T., Mangin, S.
Format: Article
Language:English
Subjects:
Biosensors
Cobalt
Condensed Matter
Domain walls
Heterostructures
Magnetic induction
Magnetic relaxation
Magnetic thin films
Magnetism
Materials Science
Nucleation
Physics
Spin valves
Spinning
Thickness
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Summary:•In Pt/Co/Ir/Co/Pt/GaAs heterostructures, magnetic relaxation obeys Fatuzzo-Labrune formalism.•Contributions of reversal phase and domain walls to the magnetic relaxation of the spin valves were distinguished.•Reversal phase and domain walls contributions to the magnetic relaxation depend on Co layer thickness. Long magnetic relaxation (up to few hours) between stable magnetic states was analyzed in Pt/Co/Ir/Co/Pt/GaAs heterostructures of different Co layers thickness. The experimental data were compared to a large variety of theoretical models amongst which the Fatuzzo-Labrune one seems to be the more relevant. The contributions from domain nucleation and domain wall motion to magnetic relaxation of the spin valves were separated and evaluated. The increase of Co layer thickness suppresses the domain nucleation and enhances the domain wall propagation. The obtained data provide an understanding of the limitations of switching time in the spin valves of large area necessary for GMR biosensors.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2017.12.083