Kinetics of light-induced degradation in compensated boron-doped silicon investigated using photoluminescence and numerical simulation

We use photoluminescence to observe light-induced degradation in silicon in real time. Numerical simulations are used to match our results and lifetime decay data from the literature with theoretical models for the generation of the light-induced boron–oxygen defects. It is found that the existing m...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2015-05, Vol.33, p.49-57
Main Authors: Fraser, K., Blanc-Pelissier, D., Dubois, S., Veirman, J., Lemiti, M.
Format: Article
Language:English
Subjects:
Engineering Sciences
Light-induced degradation
Micro and nanotechnologies
Microelectronics
Modeling
Photoluminescence
Photovoltaics
Silicon
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Summary:We use photoluminescence to observe light-induced degradation in silicon in real time. Numerical simulations are used to match our results and lifetime decay data from the literature with theoretical models for the generation of the light-induced boron–oxygen defects. It is found that the existing model of the slowly generated defect SRC, where its saturated concentration is a function of the majority carrier concentration, does not explain certain results in both p- and n-type samples. A new model is proposed in which the saturated SRC concentration is controlled by the total hole concentration under illumination.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2015.01.016