Study of a pulsed post‐discharge plasma deposition process of APTES: synthesis of highly organic pp‐APTES thin films with NH 2 functionalized polysilsesquioxane evidences

This article reports the use of pulsed remote Ar-O 2 microwave plasma assisted chemical vapor deposition with an −NH 2 containing organosilicon precursor ((3-Aminopropyl)triethoxysilane: APTES). It is shown that modifying the plasma pulses duration (t on) and the plasma off duration (t off) allows t...

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Bibliographic Details
Published in:Plasma processes and polymers 2019-04, Vol.16 (4)
Main Authors: Bulou, Simon, Lecoq, Elodie, Loyer, François, Frache, Gilles, Fouquet, Thierry, Gueye, Magamou, Belmonte, Thierry, Choquet, Patrick
Format: Article
Language:English
Subjects:
Engineering Sciences
Materials
Plasmas
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Summary:This article reports the use of pulsed remote Ar-O 2 microwave plasma assisted chemical vapor deposition with an −NH 2 containing organosilicon precursor ((3-Aminopropyl)triethoxysilane: APTES). It is shown that modifying the plasma pulses duration (t on) and the plasma off duration (t off) allows to finely tune the deposited layer composition. In addition, the results of this work demonstrate that an important film growth occurs during t off , which results in an increased −NH 2 density. Besides, high resolution MALDI-ORBITRAP Mass spectrometry analysis clearly points out that APTES oligomers up to eight base units, including silsesquioxanes (cages), and cyclosi-loxanes (rings) molecules with intact −NH 2 groups are embedded into the as grown pp-APTES thin film. K E Y W O R D S microwave discharges, plasma-enhanced chemical vapour deposition (PECVD), plasma polymerization, pulsed discharges, remote plasma processes,
ISSN:1612-8850
1612-8869
DOI:10.1002/ppap.201800177