Development of AlInN photoconductors deposited by sputtering

In this work, we have developed photoconductor devices based on Al0.39In0.61N layers grown on sapphire by reactive radio‐frequency magnetron sputtering. The fabricated devices show a sublinear dependence of the photocurrent as a function of the incident optical power. The above‐the‐band‐gap responsi...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2017-09, Vol.214 (9), p.1600780-n/a
Main Authors: Núñez‐Cascajero, Arántzazu, Jiménez‐Rodríguez, Marco, Monroy, Eva, González‐Herráez, Miguel, Naranjo, Fernando B.
Format: Article
Language:English
Subjects:
AlInN
Condensed Matter
Devices
Engineering Sciences
Grain boundaries
III‐nitride semiconductors
Irradiance
Magnetron sputtering
Materials Science
Micro and nanotechnologies
Microelectronics
Optics
Photoconductivity
Photoconductors
Photoelectric effect
Photoelectric emission
Photonic
Physics
Sapphire
sputtering
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Summary:In this work, we have developed photoconductor devices based on Al0.39In0.61N layers grown on sapphire by reactive radio‐frequency magnetron sputtering. The fabricated devices show a sublinear dependence of the photocurrent as a function of the incident optical power. The above‐the‐band‐gap responsivity reaches 7 W/A for an irradiance of 10 W/m2 (405 nm wavelength). The response decreases smoothly for below‐the‐bandgap excitation, dropping by more than an order of magnitude at 633 nm. The devices present persistent photoconductivity effects associated to carrier trapping at grain boundaries.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201600780