High-rate deposition by microwave RPECVD at atmospheric pressure

The post-discharge of a microwave resonant cavity working at atmospheric pressure is used to enhance deposition of SiO x thin films from HMDSO by chemical vapor deposition. Maximum static deposition rates are close to 150 μm h − 1 for low power consumption per unit of coated width (~ 100 W/cm). Dyna...

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Bibliographic Details
Published in:Thin solid films 2011-04, Vol.519 (13), p.4177-4185
Main Authors: Cardoso, R.P., Belmonte, T., Kosior, F., Henrion, G., Tixhon, E.
Format: Article
Language:English
Subjects:
Afterglow
Atmospheric pressure
Barometric pressure
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Deposition
Engineering Sciences
Exact sciences and technology
Hexamethyldisiloxane
Holes
Materials
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Microwave assisted chemical vapor deposition
Microwaves
Physics
Plasma Physics
Plasma-enhanced chemical vapor deposition
Plasmas
Post discharge
Power consumption
Resonant cavity
Synthesis
Thin films
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Summary:The post-discharge of a microwave resonant cavity working at atmospheric pressure is used to enhance deposition of SiO x thin films from HMDSO by chemical vapor deposition. Maximum static deposition rates are close to 150 μm h − 1 for low power consumption per unit of coated width (~ 100 W/cm). Dynamic deposition rates are close to 3.5 nm m s − 1 . The distribution of the coating thickness is heterogeneous over an area of 150 × 90 mm 2. The influence of the main parameters of the process is systematically studied to show how the key reactions, i.e. gas phase synthesis of powders and surface deposition, are correlated.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2011.02.003