Epitaxial ZnO thin films grown by pulsed electron beam deposition

• Published in: Surface science 2010-10, Vol.604 (21), p.2024-2030
• Main Authors: Tricot, S., Nistor, M., Millon, E., Boulmer-Leborgne, C., Mandache, N.B., Perrière, J., Seiler, W.
• Format: Article
• Language: English
• Subjects: Condensed Matter; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Engineering Sciences; Exact sciences and technology; Materials Science; Physics; Pole figure; Pulsed electron beam deposition (PED); Resistivity; Tauc plot; Zinc oxide
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/j.susc.2010.08.016

In this work, the pulsed electron beam deposition method (PED) is evaluated by studying the properties of ZnO thin films grown on c-cut sapphire substrates. The film composition, structure and surface morphology were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction and atomic force microscopy. Optical absorption, resistivity and Hall effect measurements were performed in order to obtain the optical and electronic properties of the ZnO films. By a fine tuning of the deposition conditions, smooth, dense, stoichiometric and textured hexagonal ZnO films were epitaxially grown on (0001) sapphire at 700 °C with a 30° rotation of the ZnO basal plane with respect to the sapphire substrate. The average transmittance of the films reaches 90% in the visible range with an optical band gap of 3.28 eV. Electrical characterization reveals a high density of charge carrier of 3.4 × 10 19 cm −3 along with a mobility of 11.53 cm²/Vs. The electrical and optical properties are discussed and compared to ZnO thin films prepared by the similar and most well-known pulsed laser deposition method.