MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates

•Demonstrated growth and mechanical exfoliation of MQWs on h-BN templates.•Obtained satellite peaks on the MQWs structure on h-BN indicating good periodicity.•Good heterointerface quality was confirmed with TEM analysis.•Depth resolved CL shows double MQW emission peaks.•After lift-off CL analysis c...

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Bibliographic Details
Published in:Journal of crystal growth 2019-02, Vol.507, p.352-356
Main Authors: Sundaram, Suresh, Li, Xin, Alam, Saiful, Ayari, Taha, Halfaya, Yacine, Patriarche, Gilles, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah
Format: Article
Language:English
Subjects:
A3. Metalorganic vapor phase epitaxy
Aluminum gallium nitrides
B1. 2D materials
B1. AlGaN MQWs
B1. h-BN
B1. Nitrides
B2. Deep UV LEDs
Buffers
Cathodoluminescence
Emission analysis
Epitaxial growth
Mechanics
Mechanics of materials
Periodic variations
Physics
Quantum wells
Sapphire
Substrates
X-ray diffraction
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Summary:•Demonstrated growth and mechanical exfoliation of MQWs on h-BN templates.•Obtained satellite peaks on the MQWs structure on h-BN indicating good periodicity.•Good heterointerface quality was confirmed with TEM analysis.•Depth resolved CL shows double MQW emission peaks.•After lift-off CL analysis confirmed good preservation of optical functionalities. We report wafer-scale growth and mechanical exfoliation of 20 periodAl0.58Ga0.42N/Al0.37Ga0.63N multiple quantum wells (MQWs) on h-BN buffered templates and compare them to control samples of the same structure on AlN templates. X-ray diffraction measurements of the MQW structure on h-BN clearly featured satellite peaks up to third order in the 2θ−ω scans indicating good MQW periodicity. Detailed transmission electron microscope (TEM) analysis show good heterointerface quality in the structure and large V-pits on the surface. Depth resolved cathodoluminescence of the MQWs on h-BN revealed a UV emission peak at 299 nm and a sharp shoulder at 292 nm. We also report lift-off and transfer of the MQW on the h-BN structure and have investigated post-transfer optical emission, which demonstrates good preservation of optical emission characteristics. Together these results show the suitability of h-BN buffers for the realization of free-standing or flexible optical devices emitting in the deep UV region.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2018.10.060