Titanium distribution profiles obtained by luminescence and LIBS measurements on Ti: Al2O3 grown by Czochralski and Kyropoulos techniques

The titanium distributions in Ti-doped sapphires grown by Czochralski and Kyropoulos techniques were evaluated using Laser-Induced Breakdown Spectroscopy (LIBS) and luminescence characterizations. Distinctly different radial profiles of Ti4+ distribution were observed in the as grown Ti: Al2O3 cryst...

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Bibliographic Details
Published in:Optical materials 2017-03, Vol.65, p.28-32
Main Authors: Alombert-Goget, Guillaume, Trichard, Florian, Li, Hui, Pezzani, Cyril, Silvestre, Maud, Barthalay, Nicolas, Motto-Ros, Vincent, Lebbou, Kheirreddine
Format: Article
Language:English
Subjects:
Chemical Sciences
Czochralski
Engineering Sciences
Kyropoulos
LIBS measurement
Physics
Ti-doped sapphire
Titanium distribution
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Summary:The titanium distributions in Ti-doped sapphires grown by Czochralski and Kyropoulos techniques were evaluated using Laser-Induced Breakdown Spectroscopy (LIBS) and luminescence characterizations. Distinctly different radial profiles of Ti4+ distribution were observed in the as grown Ti: Al2O3 crystals. The Ti4+ distribution in the crystal grown by Kyropoulos technique was analyzed as a function of the specific of the growth technique, the conclusion is significant for Ti: sapphire on laser application. Kyropoulos technique presents an advantage to reduce the proportion of Ti4+ in Ti: sapphire comparing to Czochralski technique. •Ti-doped sapphires were grown by Czochralski (Cz) and Kyropoulos (Ky) techniques.•Ti radial distributions were evaluated and correlated to the segregation effect.•By Ky technique, Ti4+ is converted to Ti3+ from the crystal edges during growth.
ISSN:0925-3467
1873-1252
DOI:10.1016/j.optmat.2016.09.049