Carrier-Noise-Enhanced Relative Intensity Noise of Quantum Dot Lasers

This paper numerically investigates the relative intensity noise of quantum dot lasers through a rate equation model taking into account both the spontaneous emission and carrier contributions. In particular, results show that the carrier noise originating from the ground and excited states signific...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of quantum electronics 2018-12, Vol.54 (6), p.1-7
Main Authors: Duan, Jianan, Wang, Xing-Guang, Zhou, Yue-Guang, Wang, Cheng, Grillot, Frederic
Format: Article
Language:English
Subjects:
Computer simulation
Engineering Sciences
frequency noise
Mathematical models
Noise
Noise intensity
Optical frequency
Optics
Oscillators
Photonic
Quantum dot lasers
Quantum dots
Relative intensity noise
Semiconductor lasers
Spontaneous emission
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper numerically investigates the relative intensity noise of quantum dot lasers through a rate equation model taking into account both the spontaneous emission and carrier contributions. In particular, results show that the carrier noise originating from the ground and excited states significantly enhances the relative intensity noise of the laser, while that from the carrier reservoir does not. Simulations also point out that a large energy interval between the quantum confined levels is more suitable for low-intensity noise operation due to the reduced contribution from the carrier noise in the excited state. Finally, the carrier noise is found to have little impact on the frequency noise, thus being negligible for the investigation of the spectral linewidth. Overall, this paper is useful for designing low-noise quantum dot oscillators for high-speed communications, optical frequency combs, and radar applications.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2018.2880452