Loading…

Carrier-Noise-Enhanced Relative Intensity Noise of Quantum Dot Lasers

This paper numerically investigates the relative intensity noise of quantum dot lasers through a rate equation model taking into account both the spontaneous emission and carrier contributions. In particular, results show that the carrier noise originating from the ground and excited states signific...

Full description

Saved in:

Bibliographic Details
Published in:	IEEE journal of quantum electronics 2018-12, Vol.54 (6), p.1-7
Main Authors:	Duan, Jianan, Wang, Xing-Guang, Zhou, Yue-Guang, Wang, Cheng, Grillot, Frederic
Format:	Article
Language:	English
Subjects:	Computer simulation Engineering Sciences frequency noise Mathematical models Noise Noise intensity Optical frequency Optics Oscillators Photonic Quantum dot lasers Quantum dots Relative intensity noise Semiconductor lasers Spontaneous emission
Citations:	Items that this one cites Items that cite this one
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

cited_by	cdi_FETCH-LOGICAL-c325t-487bff5a2d40182f3571d4e6667c65ceacb9a5e25703f3dcc8670d1f20505e5a3
cites	cdi_FETCH-LOGICAL-c325t-487bff5a2d40182f3571d4e6667c65ceacb9a5e25703f3dcc8670d1f20505e5a3
container_end_page	7
container_issue	6
container_start_page	1
container_title	IEEE journal of quantum electronics
container_volume	54
creator	Duan, Jianan Wang, Xing-Guang Zhou, Yue-Guang Wang, Cheng Grillot, Frederic
description	This paper numerically investigates the relative intensity noise of quantum dot lasers through a rate equation model taking into account both the spontaneous emission and carrier contributions. In particular, results show that the carrier noise originating from the ground and excited states significantly enhances the relative intensity noise of the laser, while that from the carrier reservoir does not. Simulations also point out that a large energy interval between the quantum confined levels is more suitable for low-intensity noise operation due to the reduced contribution from the carrier noise in the excited state. Finally, the carrier noise is found to have little impact on the frequency noise, thus being negligible for the investigation of the spectral linewidth. Overall, this paper is useful for designing low-noise quantum dot oscillators for high-speed communications, optical frequency combs, and radar applications.
doi_str_mv	10.1109/JQE.2018.2880452
format	article
fullrecord	<record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_02307220v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8531720</ieee_id><sourcerecordid>2137556758</sourcerecordid><originalsourceid>FETCH-LOGICAL-c325t-487bff5a2d40182f3571d4e6667c65ceacb9a5e25703f3dcc8670d1f20505e5a3</originalsourceid><addsrcrecordid>eNo9kM1Lw0AQxRdRsFbvgpeAJw-p-5HJbo-lRlsJSkXPyzaZpSltUneTQv97t6b0NMzM7z0ej5B7RkeM0fHz-yIbccrUiCtFE-AXZMAAVMwkE5dkQMMrHrOxvCY33q_DmiSKDkg2Nc5V6OKPpvIYZ_XK1AWW0RduTFvtMZrXLda-ag_RPxE1Nlp0pm67bfTStFFuPDp_S66s2Xi8O80h-XnNvqezOP98m08neVwIDm2cKLm0FgwvkxCHWwGSlQmmaSqLFAo0xXJsADlIKqwoi0KlkpbMcgoUEIwYkqfed2U2eueqrXEH3ZhKzya5Pt4oF1RyTvcssI89u3PNb4e-1eumc3WIpzkTEiCVoAJFe6pwjfcO7dmWUX0sVodi9bFYfSo2SB56SYWIZ1yBYJJT8Qc-wXHV</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2137556758</pqid></control><display><type>article</type><title>Carrier-Noise-Enhanced Relative Intensity Noise of Quantum Dot Lasers</title><source>IEEE Xplore (Online service)</source><creator>Duan, Jianan ; Wang, Xing-Guang ; Zhou, Yue-Guang ; Wang, Cheng ; Grillot, Frederic</creator><creatorcontrib>Duan, Jianan ; Wang, Xing-Guang ; Zhou, Yue-Guang ; Wang, Cheng ; Grillot, Frederic</creatorcontrib><description>This paper numerically investigates the relative intensity noise of quantum dot lasers through a rate equation model taking into account both the spontaneous emission and carrier contributions. In particular, results show that the carrier noise originating from the ground and excited states significantly enhances the relative intensity noise of the laser, while that from the carrier reservoir does not. Simulations also point out that a large energy interval between the quantum confined levels is more suitable for low-intensity noise operation due to the reduced contribution from the carrier noise in the excited state. Finally, the carrier noise is found to have little impact on the frequency noise, thus being negligible for the investigation of the spectral linewidth. Overall, this paper is useful for designing low-noise quantum dot oscillators for high-speed communications, optical frequency combs, and radar applications.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/JQE.2018.2880452</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Computer simulation ; Engineering Sciences ; frequency noise ; Mathematical models ; Noise ; Noise intensity ; Optical frequency ; Optics ; Oscillators ; Photonic ; Quantum dot lasers ; Quantum dots ; Relative intensity noise ; Semiconductor lasers ; Spontaneous emission</subject><ispartof>IEEE journal of quantum electronics, 2018-12, Vol.54 (6), p.1-7</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-487bff5a2d40182f3571d4e6667c65ceacb9a5e25703f3dcc8670d1f20505e5a3</citedby><cites>FETCH-LOGICAL-c325t-487bff5a2d40182f3571d4e6667c65ceacb9a5e25703f3dcc8670d1f20505e5a3</cites><orcidid>0000-0002-3029-1166 ; 0000-0001-7710-4287 ; 0000-0002-5652-2911 ; 0000-0001-8236-098X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8531720$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,780,784,885,27924,27925,54796</link.rule.ids><backlink>$$Uhttps://telecom-paris.hal.science/hal-02307220$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Duan, Jianan</creatorcontrib><creatorcontrib>Wang, Xing-Guang</creatorcontrib><creatorcontrib>Zhou, Yue-Guang</creatorcontrib><creatorcontrib>Wang, Cheng</creatorcontrib><creatorcontrib>Grillot, Frederic</creatorcontrib><title>Carrier-Noise-Enhanced Relative Intensity Noise of Quantum Dot Lasers</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>This paper numerically investigates the relative intensity noise of quantum dot lasers through a rate equation model taking into account both the spontaneous emission and carrier contributions. In particular, results show that the carrier noise originating from the ground and excited states significantly enhances the relative intensity noise of the laser, while that from the carrier reservoir does not. Simulations also point out that a large energy interval between the quantum confined levels is more suitable for low-intensity noise operation due to the reduced contribution from the carrier noise in the excited state. Finally, the carrier noise is found to have little impact on the frequency noise, thus being negligible for the investigation of the spectral linewidth. Overall, this paper is useful for designing low-noise quantum dot oscillators for high-speed communications, optical frequency combs, and radar applications.</description><subject>Computer simulation</subject><subject>Engineering Sciences</subject><subject>frequency noise</subject><subject>Mathematical models</subject><subject>Noise</subject><subject>Noise intensity</subject><subject>Optical frequency</subject><subject>Optics</subject><subject>Oscillators</subject><subject>Photonic</subject><subject>Quantum dot lasers</subject><subject>Quantum dots</subject><subject>Relative intensity noise</subject><subject>Semiconductor lasers</subject><subject>Spontaneous emission</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNo9kM1Lw0AQxRdRsFbvgpeAJw-p-5HJbo-lRlsJSkXPyzaZpSltUneTQv97t6b0NMzM7z0ej5B7RkeM0fHz-yIbccrUiCtFE-AXZMAAVMwkE5dkQMMrHrOxvCY33q_DmiSKDkg2Nc5V6OKPpvIYZ_XK1AWW0RduTFvtMZrXLda-ag_RPxE1Nlp0pm67bfTStFFuPDp_S66s2Xi8O80h-XnNvqezOP98m08neVwIDm2cKLm0FgwvkxCHWwGSlQmmaSqLFAo0xXJsADlIKqwoi0KlkpbMcgoUEIwYkqfed2U2eueqrXEH3ZhKzya5Pt4oF1RyTvcssI89u3PNb4e-1eumc3WIpzkTEiCVoAJFe6pwjfcO7dmWUX0sVodi9bFYfSo2SB56SYWIZ1yBYJJT8Qc-wXHV</recordid><startdate>20181201</startdate><enddate>20181201</enddate><creator>Duan, Jianan</creator><creator>Wang, Xing-Guang</creator><creator>Zhou, Yue-Guang</creator><creator>Wang, Cheng</creator><creator>Grillot, Frederic</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-3029-1166</orcidid><orcidid>https://orcid.org/0000-0001-7710-4287</orcidid><orcidid>https://orcid.org/0000-0002-5652-2911</orcidid><orcidid>https://orcid.org/0000-0001-8236-098X</orcidid></search><sort><creationdate>20181201</creationdate><title>Carrier-Noise-Enhanced Relative Intensity Noise of Quantum Dot Lasers</title><author>Duan, Jianan ; Wang, Xing-Guang ; Zhou, Yue-Guang ; Wang, Cheng ; Grillot, Frederic</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c325t-487bff5a2d40182f3571d4e6667c65ceacb9a5e25703f3dcc8670d1f20505e5a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Computer simulation</topic><topic>Engineering Sciences</topic><topic>frequency noise</topic><topic>Mathematical models</topic><topic>Noise</topic><topic>Noise intensity</topic><topic>Optical frequency</topic><topic>Optics</topic><topic>Oscillators</topic><topic>Photonic</topic><topic>Quantum dot lasers</topic><topic>Quantum dots</topic><topic>Relative intensity noise</topic><topic>Semiconductor lasers</topic><topic>Spontaneous emission</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Duan, Jianan</creatorcontrib><creatorcontrib>Wang, Xing-Guang</creatorcontrib><creatorcontrib>Zhou, Yue-Guang</creatorcontrib><creatorcontrib>Wang, Cheng</creatorcontrib><creatorcontrib>Grillot, Frederic</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library Online</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Duan, Jianan</au><au>Wang, Xing-Guang</au><au>Zhou, Yue-Guang</au><au>Wang, Cheng</au><au>Grillot, Frederic</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Carrier-Noise-Enhanced Relative Intensity Noise of Quantum Dot Lasers</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>2018-12-01</date><risdate>2018</risdate><volume>54</volume><issue>6</issue><spage>1</spage><epage>7</epage><pages>1-7</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>This paper numerically investigates the relative intensity noise of quantum dot lasers through a rate equation model taking into account both the spontaneous emission and carrier contributions. In particular, results show that the carrier noise originating from the ground and excited states significantly enhances the relative intensity noise of the laser, while that from the carrier reservoir does not. Simulations also point out that a large energy interval between the quantum confined levels is more suitable for low-intensity noise operation due to the reduced contribution from the carrier noise in the excited state. Finally, the carrier noise is found to have little impact on the frequency noise, thus being negligible for the investigation of the spectral linewidth. Overall, this paper is useful for designing low-noise quantum dot oscillators for high-speed communications, optical frequency combs, and radar applications.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JQE.2018.2880452</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-3029-1166</orcidid><orcidid>https://orcid.org/0000-0001-7710-4287</orcidid><orcidid>https://orcid.org/0000-0002-5652-2911</orcidid><orcidid>https://orcid.org/0000-0001-8236-098X</orcidid></addata></record>
fulltext	fulltext
identifier	ISSN: 0018-9197
ispartof	IEEE journal of quantum electronics, 2018-12, Vol.54 (6), p.1-7
issn	0018-9197 1558-1713
language	eng
recordid	cdi_hal_primary_oai_HAL_hal_02307220v1
source	IEEE Xplore (Online service)
subjects	Computer simulation Engineering Sciences frequency noise Mathematical models Noise Noise intensity Optical frequency Optics Oscillators Photonic Quantum dot lasers Quantum dots Relative intensity noise Semiconductor lasers Spontaneous emission
title	Carrier-Noise-Enhanced Relative Intensity Noise of Quantum Dot Lasers
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T04%3A23%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Carrier-Noise-Enhanced%20Relative%20Intensity%20Noise%20of%20Quantum%20Dot%20Lasers&rft.jtitle=IEEE%20journal%20of%20quantum%20electronics&rft.au=Duan,%20Jianan&rft.date=2018-12-01&rft.volume=54&rft.issue=6&rft.spage=1&rft.epage=7&rft.pages=1-7&rft.issn=0018-9197&rft.eissn=1558-1713&rft.coden=IEJQA7&rft_id=info:doi/10.1109/JQE.2018.2880452&rft_dat=%3Cproquest_hal_p%3E2137556758%3C/proquest_hal_p%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c325t-487bff5a2d40182f3571d4e6667c65ceacb9a5e25703f3dcc8670d1f20505e5a3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2137556758&rft_id=info:pmid/&rft_ieee_id=8531720&rfr_iscdi=true