Impact of AlN/Si Nucleation Layers Grown Either by NH 3 ‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2018-05, Vol.215 (9)
Main Authors: Yacoub, Hady, Zweipfennig, Thorsten, Kalisch, Holger, Vescan, Andrei, Dadgar, Armin, Wieneke, Matthias, Bläsing, Jürgen, Strittmatter, A., Rennesson, Stephanie, Semond, Fabrice
Format: Article
Language:English
Subjects:
Condensed Matter
Physics
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ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201700638