Deposition Process of Amorphous Boron Carbide from CH[sub 4]∕BCl[sub 3]∕H[sub 2] Precursor

Amorphous boron carbide coatings have been prepared by CVD from CH4/BCl3/H2 precursor mixture at low temperature (800-1050°C) and reduced pressure (12kPa). A kinetic study has been conducted to determine the kinetic law (including apparent activation energy and reaction orders) related to the deposi...

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Published in:Journal of the Electrochemical Society 2006, Vol.153 (12), p.C795
Main Authors: Berjonneau, J., Chollon, G., Langlais, F.
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Language:English
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Chemical Sciences
Material chemistry
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description Amorphous boron carbide coatings have been prepared by CVD from CH4/BCl3/H2 precursor mixture at low temperature (800-1050°C) and reduced pressure (12kPa). A kinetic study has been conducted to determine the kinetic law (including apparent activation energy and reaction orders) related to the deposition within the regime controlled by the chemical reactions. On the basis of an in-situ gas phase analysis by FTIR spectrometry and a thermodynamic study of the homogeneous equilibrium, the HBCl2 species has been identified as an effective precursor of the boron element. The evidence of correlations between the various experimental approaches has supported a discussion on the chemical process involved.
doi_str_mv 10.1149/1.2353566
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subjects Chemical Sciences
Material chemistry
title Deposition Process of Amorphous Boron Carbide from CH[sub 4]∕BCl[sub 3]∕H[sub 2] Precursor
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