Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement

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Bibliographic Details
Published in:Applied physics letters 2012-10, Vol.101 (14), p.143502
Main Authors: Woo Lee, Jae, Jang, Doyoung, Mouis, Mireille, Tachi, Kiichi, Tae Kim, Gyu, Ernst, Thomas, Ghibaudo, Gérard
Format: Article
Language:English
Subjects:
Engineering Sciences
Micro and nanotechnologies
Microelectronics
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.4756910