Mobility analysis of surface roughness scattering in FinFET devices

► Mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. ► The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions. ► The contribution of the surface roughness scattering was...

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Bibliographic Details
Published in:Solid-state electronics 2011-08, Vol.62 (1), p.195-201
Main Authors: Lee, Jae Woo, Jang, Doyoung, Mouis, Mireille, Kim, Gyu Tae, Chiarella, Thomas, Hoffmann, Thomas, Ghibaudo, Gérard
Format: Article
Language:English
Subjects:
Applied sciences
Devices
Drains
Effective mobility
Electric potential
Electronics
Engineering Sciences
Exact sciences and technology
FinFET
Low temperature measurement
Micro and nanotechnologies
Microelectronics
Scattering
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Surface roughness
Surface roughness scattering
Surface separation
Temperature dependence
Transistors
Voltage
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Summary:► Mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. ► The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions. ► The contribution of the surface roughness scattering was analysed and that on sidewalls was about three times stronger than on top surface for n-channel FinFETs. This paper presents a mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. Using temperature dependent analysis of effective mobility, quantitative information about the influence of the roughness could be obtained directly on the device. The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions. Using a conventional mobility model, it was possible to fit the gate voltage and temperature dependence of sidewall and top surface mobilities. This procedure allowed the contribution of the surface roughness scattering to be quantified with nondestructive characterization. Significant differences were observed for sidewalls and top surface. In the specific case under study, surface roughness scattering on sidewalls was about three times stronger than on top surface for n-channel FinFETs, whereas it remained similar for p-channel ones.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2011.04.020