The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substrates

Several nanometer high steps are observed by (scanning) transmission electron microscopy at the surface and interfaces in heteroepitaxially grown III–Sb layers on vicinal Si(001) substrates. Their relations with antiphase boundaries (APBs) and threading dislocations (TDs) are elaborated. An asymmetr...

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Bibliographic Details
Published in:Physica status solidi. PSS-RRL. Rapid research letters 2019-10, Vol.13 (10)
Main Authors: Niehle, Michael, Rodriguez, Jean-Baptiste, Cerutti, Laurent, Tournié, Eric, Trampert, Achim
Format: Article
Language:English
Subjects:
Antiphase boundaries
Bunching
Electrons
Engineering Sciences
Equivalence
Physics
Silicon substrates
Symmetry
Threading dislocations
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Summary:Several nanometer high steps are observed by (scanning) transmission electron microscopy at the surface and interfaces in heteroepitaxially grown III–Sb layers on vicinal Si(001) substrates. Their relations with antiphase boundaries (APBs) and threading dislocations (TDs) are elaborated. An asymmetric number density of TDs on symmetry‐equivalent {111} lattice planes is revealed and explained according to the substrate miscut and the lattice misfit in the heteroepitaxial material system. Finally, a step bunching mechanism is proposed based on the interplay of APBs, TDs, and the vicinal surface of the miscut substrate.
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.201900290