Performance Enhancement of Al 2 O 3 /H-Diamond MOSFETs Utilizing Vacuum Annealing and V 2 O 5 as a Surface Electron Acceptor

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Bibliographic Details
Published in:IEEE electron device letters 2018-09, Vol.39 (9), p.1354-1357
Main Authors: Macdonald, David A., Crawford, Kevin G., Tallaire, Alexandre, Issaoui, Riadh, Moran, David A. J.
Format: Article
Language:English
Subjects:
Electronics
Engineering Sciences
Physics
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2856920