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Tunable X-Band Optoelectronic Oscillators Based on External-Cavity Semiconductor Lasers

Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical regime tunable over the entire X-band. Moreover, unlike stan...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2017-06, Vol.53 (3), p.1-6
Main Authors: Chien-Yuan Chang, Wishon, Michael J., Daeyoung Choi, Junliang Dong, Merghem, Kamel, Ramdane, Abderrahim, Lelarge, Francois, Martinez, Anthony, Locquet, Alexandre, Citrin, D. S.
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Language:English
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Summary:Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical regime tunable over the entire X-band. Moreover, unlike standard optoelectronic oscillators, we need not employ the time-dependent optical intensity incident on a photodiode to generate the microwave signal, but rather have the option of generating the electrical microwave signal directly as a voltage V(t) at the laser-diode injection terminals under constant current operation; no photodiode need be involved, thus circumventing optical-toelectrical conversion. We achieve a timing jitter of 10 ps and a quality factor of ≳ 2 × 10 5 across the entire X-band, that ranges from 6.79 to 11.48 GHz. Tuning is achieved by varying the injection current J.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2017.2682702