A model noise temperature for nonlinear transport in semiconductors

We present an analytical modeling of the noise temperature associated with velocity fluctuations obtained in the framework of the linear-response theory around a steady state. The expressions are rigorously related to an eigenvalue expansion of the response matrix and are applicable to ohmic as well...

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Bibliographic Details
Published in:Journal of applied physics 1996-11, Vol.80 (9), p.5067-5075
Main Authors: Varani, L., Houlet, P., Vaissière, J. C., Nougier, J. P., Starikov, E., Gruzhinskis, V., Shiktorov, P., Reggiani, L., Hlou, L.
Format: Article
Language:English
Subjects:
Computational Physics
Condensed Matter
Electronics
Engineering Sciences
Materials Science
Physics
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Summary:We present an analytical modeling of the noise temperature associated with velocity fluctuations obtained in the framework of the linear-response theory around a steady state. The expressions are rigorously related to an eigenvalue expansion of the response matrix and are applicable to ohmic as well as to nonohmic (hot-carrier) conditions. Theory requires as input parameters the reciprocal carrier effective mass, the drift velocity, the carrier energy, the variance of velocity fluctuations, and the covariance of velocity-energy fluctuations as functions of the electric field in stationary and homogeneous conditions. The analytical results obtained for the case of holes in Si and electrons in GaAs at T=300 K are validated by comparison with experiments.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.363485