Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE

• Published in: Journal of crystal growth 2019-04, Vol.512, p.11-15
• Main Authors: Bucamp, A., Coinon, C., Codron, J.-L., Troadec, D., Wallart, X., Desplanque, L.
• Format: Article
• Language: English
• Subjects: A1. Nanostructures; A3. Molecular beam epitaxy; A3. Quantum wells; A3. Selective epitaxy; B2. Semiconducting indium compounds; Buffer layers; Electrical properties; Engineering Sciences; Flux; Hydrogen; Indium phosphides; Micro and nanotechnologies; Microelectronics; Molecular beam epitaxy; Nanostructure; Optical properties; Photoluminescence; Quantum wells; Selectivity; Silicon dioxide; Substrates; Thin films; Transport properties
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2019.01.033

•In-plane InGaAs nanowires are grown using selective area molecular beam epitaxy.•Growth selectivity is achieved at 470 °C thanks to an atomic hydrogen flux.•High quality InGaAs thin films grown on InP without a buffer layer are achieved. We investigate the optical and electrical properties of InGaAs thin films and nanostructures grown directly on an InP semi-insulating substrate without any buffer layer using atomic hydrogen assisted molecular beam epitaxy. We confirm the positive influence of the atomic hydrogen flux during the deoxidization process as well as during the growth itself improving the photoluminescence properties of InGaAs quantum wells. We also study the effect of the atomic hydrogen flux on the electrical properties of buffer free undoped, Te or Si doped InGaAs epilayers. Eventually, we demonstrate that atomic hydrogen flux can be used to achieve InGaAs growth selectivity with respect to a SiO2 mask for a growth temperature as low as 470 °C and obtain in-plane InGaAs nanostructures on InP with good transport properties.