Thermal conductivity of nonequilibrium carriers

We present a theoretical analysis of the thermal conductivity of charge carriers in semiconductors under nonequilibrium conditions due to an applied electric field. The theory is based on a correlation-function formalism which directly relates this kinetic coefficient to four spectral densities invo...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 1999-12, Vol.272 (1), p.247-249
Main Authors: Varani, L, Gaubert, P, Vaissière, J.C, Nougier, J.P, Mateos, J, González, T, Pardo, D, Reggiani, L, Starikov, E, Shiktorov, P, Gruzhinskis, V
Format: Article
Language:English
Subjects:
Computational Physics
Condensed Matter
Correlation functions
Electronics
Energy transport
Engineering Sciences
Materials Science
Monte Carlo Calculations
Physics
Thermal conductivity
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Summary:We present a theoretical analysis of the thermal conductivity of charge carriers in semiconductors under nonequilibrium conditions due to an applied electric field. The theory is based on a correlation-function formalism which directly relates this kinetic coefficient to four spectral densities involving carrier velocity and energy flux fluctuations. Monte Carlo calculations performed for the cases of p-Si and n-GaAs give an evidence of a strong dependence of the thermal conductivity on increasing electric fields.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(99)00279-3