Development of InxGa1-xN/GaN axial multiple quantum well nanowire for solar cell applications

• Published in: Optik (Stuttgart) 2020-04, Vol.207, p.163844, Article 163844
• Main Authors: Aissat, A., Vilcot, J.P.
• Format: Article
• Language: English
• Subjects: Engineering Sciences; Materials; Micro and nanotechnologies; Microelectronics; Nanostructures; Nanowire; optoelectronic; solar cells
• ISSN: 0030-4026; 1618-1336
• DOI: 10.1016/j.ijleo.2019.163844

In this paper, we report a simulation and investigation of a single InxGa1-xN/GaN axial multiple quantum well nanowire (MQWNW) solar cell of radius r = 190 nm and a length of L = 1165 nm. Our results have been shown that 15 In0.15Ga0.85N (QW) /GaN (barrier) periods is the maximum number that our structure can be supported with an optimal efficiency of about 1.65% achieved with ε = 1.5%. The insertion of MQWs in nanowire permits the growth of InxGa1-xN MQWs with high indium concentration of about 50% and ε = 5%. At this indium concentration, the optimal efficiency obtained was 1.70%. Moreover; the structure has been studied with respect to the nanowire radius. In this context, we have shown that the efficiency enhancement achieved through the increase of radius is attributed to the increase of photo-carriers. Study of polarization and proton irradiations has indicated the negative effect of polarization on structure performances and high resistance of III-N semiconductor materials against the radiations, respectively. From these novel structures we can improve solar cell performance for new applications.