Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs

• Published in: Microelectronic engineering 2019-08, Vol.216, p.111027, Article 111027
• Main Authors: Contoyiannis, Y., Potirakis, S.M., Stavrinides, S.G., Hanias, M.P., Tassis, D., Theodorou, C.G.
• Format: Article
• Language: English
• Subjects: Broken symmetry; Critical phenomena; Data Analysis, Statistics and Probability; Deterministic chaotic nature; Dynamical systems; Electric currents; Electronics; Engineering Sciences; Intermittency; Low frequency noise (LFN); Method of critical fluctuations (MCF); Micro and nanotechnologies; Microelectronics; MOSFETs; Noise; Physics; Random telegraph noise (RTN); Thin bodies; Time series; Tri-critical dynamics; UTBB FD-SOI MOSFET; Variation
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2019.111027

The drain current in nanoscale fully depleted ultra-thin body and buried oxide n-MOSFETs is studied in terms of critical dynamics. The time series formed by the measured current through the channel of the MOSFET, appears to have the form of random telegraph noise (RTN). This timeseries is analyzed by the Method of Critical Fluctuation (MCF). Its dynamics are compatible with critical intermittency. According to the quantitative analysis performed, the current-value distributions are compatible with the spontaneous symmetry breaking phenomenon; in addition, it also carries information of criticality according to the corresponding power law. Finally, MCF analysis identified traces of tri-critical dynamics. [Display omitted] •Study of the measured drain current in a UTBB FD-SOI MOSFETs in terms of critical dynamics.•Experimental Random Telegraph Noise (RTN) timeseries analysis by means of the Method of Critical Fluctuations (MCF).•The MCF reveals that the demonstrated by RTN dynamics are compatible with critical intermittency.•The beginning of a symmetry breaking phenomenon is indicated by the relevant analysis.