Low temperature sintering of ZnTiO3/TiO2 based dielectric with controlled temperature coefficient

• Published in: Journal of the European Ceramic Society 2007, Vol.27 (7), p.2561-2566
• Main Authors: CHAOUCHI, A, MARINEL, S, ALIOUAT, M, D'ASTORG, S
• Format: Article
• Language: English
• Subjects: Applied sciences; Building materials. Ceramics. Glasses; Ceramic industries; Chemical industry and chemicals; Chemical Sciences; Electrotechnical and electronic ceramics; Exact sciences and technology; Material chemistry; Technical ceramics
• ISSN: 0955-2219; 1873-619X
• DOI: 10.1016/j.jeurceramsoc.2006.09.015

Structure, microstructure and dielectric properties of ZnTiO3 and rutile TiO2 mixtures (ZnTiO3 + xTiO2 with x = ,0.0,0.0,0.,0.15 and 0.2) sintered using ZnO-B2O3 glass phase (5 wt% added) as sintering aid were investigated. For all compounds, the sintering temperature was 900 C. XRD patterns indicated for x = 0.1 that the material was composed of three phases identified as ZnTiO3 hexagonal, TiO2 rutile and ZnO. The presence of ZnO is explained by the introduction of Ti into the Zn site to form (Zn1-xTix)TiO3+x solid solution resulting in the departure of ZnO from the ZnTiO3 structure. The ZnTiO3 + 0.15TiO2 composition sintered at 900 C with glass addition showed attractive dielectric properties (epsilonr = 23, tan delta < 10 exp(-3) and a temperature coefficient of dielectric constant near zero (tau(epsilon) = 0 ppm/C)) at 1 MHz. The introduction of TiO2 allowed the temperature coefficient of permittivity to be tuned. All these properties make the system suitable to manufacture silver based electrodes for multilayer dielectric devices. 14 refs.