Characterization of a 15 GHz integrated bulk InGaAsP passively modelocked ring laser at 153µm

We report on an extensive characterization of a 15GHz integrated bulk InGaAsP passively modelocked ring laser at 1530 nm. The laser is modelocked for a wide range of amplifier currents and reverse bias voltages on the saturable absorber. We have measured a timing jitter of 7.1 ps (20 kHz – 80 MHz),...

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Bibliographic Details
Published in:Optics express 2006-10, Vol.14 (21), p.9716
Main Authors: Barbarin, Yohan, Bente, Erwin A. J. M., Heck, Martijn J. R., Oei, Y. S., Nötzel, Richard, Smit, Meint K.
Format: Article
Language:English
Subjects:
Engineering Sciences
Optics
Photonic
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Summary:We report on an extensive characterization of a 15GHz integrated bulk InGaAsP passively modelocked ring laser at 1530 nm. The laser is modelocked for a wide range of amplifier currents and reverse bias voltages on the saturable absorber. We have measured a timing jitter of 7.1 ps (20 kHz – 80 MHz), which is low for an all-active device using bulk material and due to the ring configuration. Measured output pulses are highly chirped, a FWHM bandwidth is obtained of up to 4.5 nm. Such lasers with high bandwidth pulses and compatible with active-passive integration are of great interest for OCDMA applications.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.14.009716