Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 1018cm−3. We show that such a behavior can be theoretically...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 1999-12, Vol.273-274, p.140-143
Main Authors: Farvacque, J.-L, Bougrioua, Z, Moerman, I, Van Tendeloo, G, Lebedev, O
Format: Article
Language:English
Subjects:
Dislocations
GaN
Physics
Transport properties
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Summary:Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 1018cm−3. We show that such a behavior can be theoretically reproduced by assuming that the columnar structure (i.e. the dislocation microstructure) is responsible for internal electronic barriers.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(99)00431-7