Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation

In this paper, we extend the model developed in part-I of this work to include the effects of the back-end-of-line (BEOL) metal layers and test its validity against on-wafer measurement results of SiGe heterojunction bipolar transistors (HBTs). First we modify the position dependent substrate temper...

Full description

Saved in:
Bibliographic Details
Published in:Electronics (Basel) 2020-09, Vol.9 (9), p.1365
Main Authors: Gupta, Aakashdeep, Nidhin, K, Balanethiram, Suresh, Yadav, Shon, Chakravorty, Anjan, Fregonese, Sebastien, Zimmer, Thomas
Format: Article
Language:English
Subjects:
Computer simulation
Coupling coefficients
Emitters
Engineering Sciences
Heat conductivity
Heat transmission
Heterojunction bipolar transistors
Micro and nanotechnologies
Microelectronics
Semiconductor devices
Silicon germanides
Simulation
Substrates
Temperature dependence
Thermal conductivity
Thermal coupling
Three dimensional models
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, we extend the model developed in part-I of this work to include the effects of the back-end-of-line (BEOL) metal layers and test its validity against on-wafer measurement results of SiGe heterojunction bipolar transistors (HBTs). First we modify the position dependent substrate temperature model of part-I by introducing a parameter to account for the upward heat flow through BEOL. Accordingly the coupling coefficient models for bipolar transistors with and without trench isolations are updated. The resulting modeling approach takes as inputs the dimensions of emitter fingers, shallow and deep trench isolation, their relative locations and the temperature dependent material thermal conductivity. Coupling coefficients obtained from the model are first validated against 3D TCAD simulations including the effect of BEOL followed by validation against measured data obtained from state-of-art multifinger SiGe HBTs of different emitter geometries.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics9091365