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Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation
In this paper, we extend the model developed in part-I of this work to include the effects of the back-end-of-line (BEOL) metal layers and test its validity against on-wafer measurement results of SiGe heterojunction bipolar transistors (HBTs). First we modify the position dependent substrate temper...
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| Published in: | Electronics (Basel) 2020-09, Vol.9 (9), p.1365 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c353t-27a3dd0e155261d7ee97a94a2d214231b39c140e35876b877e79d4470741af3c3 |
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| cites | cdi_FETCH-LOGICAL-c353t-27a3dd0e155261d7ee97a94a2d214231b39c140e35876b877e79d4470741af3c3 |
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| container_issue | 9 |
| container_start_page | 1365 |
| container_title | Electronics (Basel) |
| container_volume | 9 |
| creator | Gupta, Aakashdeep Nidhin, K Balanethiram, Suresh Yadav, Shon Chakravorty, Anjan Fregonese, Sebastien Zimmer, Thomas |
| description | In this paper, we extend the model developed in part-I of this work to include the effects of the back-end-of-line (BEOL) metal layers and test its validity against on-wafer measurement results of SiGe heterojunction bipolar transistors (HBTs). First we modify the position dependent substrate temperature model of part-I by introducing a parameter to account for the upward heat flow through BEOL. Accordingly the coupling coefficient models for bipolar transistors with and without trench isolations are updated. The resulting modeling approach takes as inputs the dimensions of emitter fingers, shallow and deep trench isolation, their relative locations and the temperature dependent material thermal conductivity. Coupling coefficients obtained from the model are first validated against 3D TCAD simulations including the effect of BEOL followed by validation against measured data obtained from state-of-art multifinger SiGe HBTs of different emitter geometries. |
| doi_str_mv | 10.3390/electronics9091365 |
| format | article |
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First we modify the position dependent substrate temperature model of part-I by introducing a parameter to account for the upward heat flow through BEOL. Accordingly the coupling coefficient models for bipolar transistors with and without trench isolations are updated. The resulting modeling approach takes as inputs the dimensions of emitter fingers, shallow and deep trench isolation, their relative locations and the temperature dependent material thermal conductivity. Coupling coefficients obtained from the model are first validated against 3D TCAD simulations including the effect of BEOL followed by validation against measured data obtained from state-of-art multifinger SiGe HBTs of different emitter geometries.</description><identifier>ISSN: 2079-9292</identifier><identifier>EISSN: 2079-9292</identifier><identifier>DOI: 10.3390/electronics9091365</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Computer simulation ; Coupling coefficients ; Emitters ; Engineering Sciences ; Heat conductivity ; Heat transmission ; Heterojunction bipolar transistors ; Micro and nanotechnologies ; Microelectronics ; Semiconductor devices ; Silicon germanides ; Simulation ; Substrates ; Temperature dependence ; Thermal conductivity ; Thermal coupling ; Three dimensional models ; Transistors</subject><ispartof>Electronics (Basel), 2020-09, Vol.9 (9), p.1365</ispartof><rights>2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). 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| ispartof | Electronics (Basel), 2020-09, Vol.9 (9), p.1365 |
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| subjects | Computer simulation Coupling coefficients Emitters Engineering Sciences Heat conductivity Heat transmission Heterojunction bipolar transistors Micro and nanotechnologies Microelectronics Semiconductor devices Silicon germanides Simulation Substrates Temperature dependence Thermal conductivity Thermal coupling Three dimensional models Transistors |
| title | Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation |
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