Effects of high temperature on the electrical behaviour of AlGaN/GaN HEMTs

High-temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 °C in air. These high-temperature electric...

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Bibliographic Details
Published in:Microwave and optical technology letters 2002-05 (34), p.4-6
Main Authors: Guhel, Y., Boudart, B., Hoel, Virginie, Werquin, M., Gaquière, Christophe, de Jaeger, Jean-Claude, Poisson, M. A., Daumiller, I., Kohn, E.
Format: Article
Language:English
Subjects:
Engineering Sciences
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Summary:High-temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 °C in air. These high-temperature electrical measurements have also shown the existence of electrical traps. These traps are sensitive to the bias point, the illumination, and the temperature
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.10355