First results of AlGaN/GaN HEMTs on sapphire substrate using an argon ion implant isolation technology

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Bibliographic Details
Published in:Microwave and optical technology letters 2005
Main Authors: Werquin, M., Vellas, N., Guhel, Y., Ducatteau, D., Boudart, B., Pesant, J. C., Bougrioua, Z., Germain, M., de Jaeger, Jean-Claude, Gaquière, Christophe
Format: Article
Language:English
Subjects:
Engineering Sciences
Online Access:Get full text
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ISSN:0895-2477
1098-2760