Magneto-Electroacoustic Dynamics in a Straintronic Random Access Memory Cell

—The straintronic principle of nonvolatile magnetoelectric random access memory (MELRAM) is attracting attention because of the prospect of achieving ultra-low-power consumption in memory devices on its basis. The mechanism of switching magnetic moments by pulse deformation of elastically coupled ma...

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Bibliographic Details
Published in:Technical physics letters 2020, Vol.46 (1), p.38-41
Main Authors: Preobrazhensky, V. L., Krutyansky, L. M., Tiercelin, N., Pernod, P.
Format: Article
Language:English
Subjects:
Classical and Continuum Physics
Computer simulation
Engineering Sciences
Excitation
Magnetic moments
Magnetic switching
Magnetostriction
Memory devices
Micro and nanotechnologies
Microelectronics
Physics
Physics and Astronomy
Piezoelectricity
Power consumption
Random access memory
Substrates
Subsystems
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Summary:—The straintronic principle of nonvolatile magnetoelectric random access memory (MELRAM) is attracting attention because of the prospect of achieving ultra-low-power consumption in memory devices on its basis. The mechanism of switching magnetic moments by pulse deformation of elastically coupled magnetic and piezoelectric subsystems is associated with the excitation of acoustic oscillations in memory cells. The oscillation period in nanoscale cells is comparable to the switching time of magnetic moments, which can distort the process of recording information. The influence of acoustic excitations on the dynamics of magnetic switching has been investigated using numerical simulation in relation to a magnetostrictive cell of 50 × 50 × 400-nm size on a PMN-PT 〈011〉 piezoelectric substrate. The parameters of the control electrical pulses providing stable binary switching of the system magnetic states have been determined.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785020010113