Influence of the magnetic field sweeping rate on magnetic transitions in synthetic ferrimagnets with perpendicular anisotropy

The evolution of the switching field between stable states in MgO/CoFeB/Ta/CoFeB/MgO/GaAs and Pt/Co/Ir/Co/Pt/Ta/SiO2 synthetic ferrimagnets with perpendicular anisotropy as a function of the magnetic field sweeping rate (MFSR) of 0.1–104 Oe/s has been studied. The most significant effect of the MFSR...

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Bibliographic Details
Published in:Applied physics letters 2019-06, Vol.114 (22)
Main Authors: Morgunov, R. B., Kunitsyna, E. I., Talantsev, A. D., Koplak, O. V., Fache, T., Lu, Y., Mangin, S.
Format: Article
Language:English
Subjects:
Anisotropy
Applied physics
Cobalt
Condensed Matter
Domain walls
Ferrimagnetism
Ferrimagnets
Heterostructures
Iridium
Magnesium oxide
Magnetic fields
Magnetic transitions
Magnetism
Magnetization reversal
Materials Science
Nucleation
Physics
Platinum
Silicon dioxide
Sweeping
Switches
Tantalum
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Summary:The evolution of the switching field between stable states in MgO/CoFeB/Ta/CoFeB/MgO/GaAs and Pt/Co/Ir/Co/Pt/Ta/SiO2 synthetic ferrimagnets with perpendicular anisotropy as a function of the magnetic field sweeping rate (MFSR) of 0.1–104 Oe/s has been studied. The most significant effect of the MFSR is an inversion of the interstate transition sequence. In the MgO/CoFeB/Ta/CoFeB/MgO/GaAs heterostructure, the increase in MFSR switches the dominant mechanism of magnetization reversal from propagation of domain walls to a nucleation of reversed magnetization areas. In Pt/Co/Ir/Co/Pt/Ta/SiO2, the MFSR affects the final domain state of the transition, starting from the initial antiparallel configuration of the synthetic ferrimagnet.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5096951