A unified aging compact model for hot carrier degradation under mixed-mode and reverse E-B stress in complementary SiGe HBTs

This paper presents an accurate, comprehensive and physics-based aging compact model for stress-induced degradation due to hot-carrier generation and oxide trapping in advanced complementary NPN and PNP SiGe HBTs. The analytical model equations are derived from the solution of reaction–diffusion the...

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Bibliographic Details
Published in:Solid-state electronics 2020-10, Vol.172, p.107900, Article 107900
Main Authors: Mukherjee, C., Fischer, G.G., Marc, F., Couret, M., Zimmer, T., Maneux, C.
Format: Article
Language:English
Subjects:
Aging
Compact model
Complementary SiGe HBTs
Engineering Sciences
Hot-carrier degradation
Micro and nanotechnologies
Microelectronics
Safe operating area
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Summary:This paper presents an accurate, comprehensive and physics-based aging compact model for stress-induced degradation due to hot-carrier generation and oxide trapping in advanced complementary NPN and PNP SiGe HBTs. The analytical model equations are derived from the solution of reaction–diffusion theory and Fick’s law of diffusion combined with oxide trapping mechanism under accelerated stress conditions. The model accuracy has been validated against results from long-term aging tests performed close to the safe-operating-areas of an advanced complementary 0.25 µm BiCMOS technology. Degradation asymmetry observed between NPN and PNP devices is accurately captured by this unified aging compact model. This study highlights the challenges of predicting degradation of complementary circuits and thereby improving its functionalities by designing better-matched NPN and PNP HBTs.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2020.107900